Publications Conference paper · 2017
SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage
Conference on Radiation Effects on Components and Systems (RADECS), 2017
Abstract
Radiation tests with 14.2 MeV neutrons were performed at ultra low bias voltages on COTS SRAMs manufactured on 130nm, 90nm and 65nm CMOS processes. Experimental results with power supplies in 0.5V-3.17V are presented and discussed
Cite
BibTeX
@inproceedings{clemente2017seu,
author = {Clemente, JA and Fraire, Juan A. and Solinas, M and Franco, FJ and Villa, Francesca and Rey, Solenne and Baylac, Maud and Puchner, Helmut and Mecha, H and Velazco, Raoul},
title = {SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage},
booktitle = {Conference on Radiation Effects on Components and Systems (RADECS)},
year = {2017},
url = {https://in2p3.hal.science/in2p3-01735635v1}
}